Krishna Saraswat

Krishna Saraswat is a professor in Stanford Department of Electrical Engineering in the United States. He is an ISI Highly Cited Researcher in engineering, placing him in the top 250 worldwide in engineering research, and a recipient of IEEE's Andrew S. Grove Award for "seminal contributions to silicon process technology". Education and positions Saraswat received his B.E. degree in electronics in 1968 from Birla Institute of Technology and Science, Pilani (BITS) and his M.S. (1968) and Ph.D. (1974) in electrical engineering from Stanford University. Saraswat stayed at Stanford as a researcher and was appointed professor of electrical engineering in 1983. He also has an honorary appointment of an adjunct professor at the Birla Institute of Technology and Science, Pilani, India, since January 2004 and a visiting professor during the summer of 2007 at IIT Bombay, India. He is Stanford's Rickey/Nielsen Professor in the School of Engineering, and courtesy professor of materials science and engineering. Career Saraswat has worked on modeling of CVD of silicon, conduction in polysilicon, diffusion in silicides, contact resistance, interconnect delay, and oxidation effects in silicon. He pioneered the technologies for aluminum/titanium layered interconnects, which became an industry standard, as well as CVD of MOS gates with alternative materials such as tungsten, WSi2, and SiGe.