Coherent sampling 300mm SiC for AI HPC

Coherent Corp. has begun customer sampling of its 300‑mm high‑thermal-conductivity silicon carbide substrates for AI infrastructure and high‑performance computing, moving from internal development to external evaluation with semiconductor partners. The company’s vertically integrated approach covers SiC crystal growth, wafering, polishing, and characterization, aiming to reduce external dependency and potentially lower cost per device through tighter process control. Coherent asserts that its 300‑mm substrates offer superior heat spreading, with improvements cited in the range of roughly 25% or more, enabling higher power densities while maintaining compatibility with existing manufacturing platforms. The strategic focus targets AI data centers and HPC markets where thermal management is a primary performance constraint, aligning with growing demand for materials capable of efficient heat removal in next‑gen processors. Given the dual‑use nature of silicon carbide, the expansion may require EAR licensing for eligible entities as Coherent scales its manufacturing footprint. Leadership, including Craig Mullaney, emphasizes the role of advanced SiC materials in building the foundation for future AI infrastructure, as the company progresses toward higher‑volume production.